A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications-Reference-Cited by-同舟云学术

A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

Published:2019 Issue: Volume:7 Page:495-502
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Kunitake Hitoshi^ORCID,Arasawa Ryo^ORCID,Seki Takako^ORCID,Honda Ryunosuke^ORCID,Baba Haruyuki^ORCID,Shimada Daigo^ORCID,Kimura Hajime,Tokumaru Ryo^ORCID,Atsumi Tomoaki^ORCID,Kato Kiyoshi^ORCID,Yamazaki Shunpei^ORCID,Ohshima Kazuaki^ORCID,Tsuda Kazuki^ORCID,Matsumoto Noriko^ORCID,Koshida Tatsuki^ORCID,Ohshita Satoru^ORCID,Sawai Hiromi^ORCID,Yanagisawa Yuichi^ORCID,Saga Shiori^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8656606/08684203.pdf?arnumber=8684203

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical field‐effect transistor using c‐axis aligned crystal indium–gallium–zinc oxide on glass substrate and prototype organic light‐emitting diode display;Journal of the Society for Information Display;2024-06-21

2. Optimizing Length Scalability of InGaZnO Thin‐Film Transistors through Lateral Carrier Profile Engineering and Negative ΔL Extension Structure;Advanced Electronic Materials;2024-06-18

3. Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices;Chemistry of Materials;2024-02-26

4. Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress;IEEE Open Journal of Nanotechnology;2024

5. Oxide and 2D TMD semiconductors for 3D DRAM cell transistors;Nanoscale Horizons;2024