Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor-Reference-Cited by-同舟云学术

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Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor

Published:2017-09 Issue:5 Volume:5 Page:306-309
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Ko Eunah,Lee Hyunjae,Goh Youngin,Jeon Sanghun^ORCID,Shin Changhwan^ORCID

Funder

National Research Foundation of Korea

Korea Government

Future Semiconductor Device Technology Development Program

Ministry of Trade, Industry & Energy and the Korea Semiconductor Research Consortium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8015129/07990244.pdf?arnumber=7990244

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