Bipolar Resistive Switching Behavior in Sol-Gel MgTiNiOxMemory Device-Reference-Cited by-同舟云学术

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Bipolar Resistive Switching Behavior in Sol-Gel MgTiNiOxMemory Device

Published:2016-09 Issue:5 Volume:4 Page:321-327
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Chang Yu-Chi,Lee Ke-Jing,Lee Cheng-Jung,Wang Li-Wen,Wang Yeong-Her

Funder

Ministry of Science and Technology of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://ieeexplore.ieee.org/iel7/6245494/7549118/07463006.pdf

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application;Gels;2021-12-27

2. Impact of annealing environment on performance of InWZnO conductive bridge random access memory;Vacuum;2021-09

3. Bio-Cellulose Substrate for Fabricating Fully Biodegradable Resistive Random Access Devices;ACS Applied Polymer Materials;2021-08-13

4. Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application;Journal of Electronic Materials;2021-01-19

5. Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices;Advanced Materials;2020-12-14

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