Turnover phenomenon in N ν N Si devices and second breakdown in transistors-Reference-Cited by-同舟云学术

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Turnover phenomenon in N ν N Si devices and second breakdown in transistors

Published:1966-11 Issue:11 Volume:ED-13 Page:748-753
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Agatsuma T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31626/01474427.pdf?arnumber=1474427

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors;IEEE Transactions on Electron Devices;1996

2. Self-heating effects in basic semiconductor structures;IEEE Transactions on Electron Devices;1993

3. Transport properties of the composite material carbon-poly(vinyl chloride);Physical Review B;1978-11-15

4. Observation of carrier densities in silicon devices by infrared emission;Journal of Physics E: Scientific Instruments;1977-08

5. Relaxation Phenomenon at Turnover in Point Contact Silicon Devices;Journal of The Electrochemical Society;1971

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