Optimum bulk drift-field thicknesses in solar cells
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31623/01474326.pdf?arnumber=1474326
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The 4π epitaxial Si detectors array for in-beam spectroscopy experiments;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1997-05
2. Minority-carrier transport in nonuniformly doped silicon-an analytical approach;IEEE Transactions on Electron Devices;1990
3. Limitations of built-in electric field enhancement of minority carrier current collection in GaAs backwall schottky barrier solar cells;Solar Cells;1986-08
4. Self-Biased Silicon Detectors with a Built-In Field for Measuring Heavy Charged Particles;IEEE Transactions on Nuclear Science;1986
5. Photovoltaic Behavior of Junctions;Thin Film Solar Cells;1983
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