Limitations of built-in electric field enhancement of minority carrier current collection in GaAs backwall schottky barrier solar cells-Reference-Cited by-同舟云学术

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Limitations of built-in electric field enhancement of minority carrier current collection in GaAs backwall schottky barrier solar cells

Published:1986-08 Issue:2 Volume:18 Page:139-151
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Soukup R.J.,Bartunek G.P.,Lipps D.R.

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices

2. A study of efficiency in low resistivity silicon solar cells

3. Solar cell high efficiency and radiation damage;Fanj,1977

4. Optimum bulk drift-field thicknesses in solar cells

5. An experimental study of drift-field silicon solar cells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-powered photodetector based on direct vapour transfer (DVT) method grown tin selenide (SnSe) crystals;Journal of Alloys and Compounds;2023-04

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