Instability in vacuum deposited silicon oxide-Reference-Cited by-同舟云学术

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Instability in vacuum deposited silicon oxide

Published:1967-11 Issue:11 Volume:14 Page:760-764
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Swystun E.J.,Tickle A.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31639/01474826.pdf?arnumber=1474826

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A thin-film transistor with polytetrafluoroethylene as insulator;IEE Proceedings I Solid State and Electron Devices;1980

2. Time constant of the ion current in thin film capacitors;Physica Status Solidi (a);1977-12-16

3. The influence of the electronic current on the measurement of ion polarization in evaporated silicon oxide;Thin Solid Films;1977-04

4. Cole-Cole diagrams of ionic hopping systems;Journal of Non-Crystalline Solids;1977-04

5. Influence of a flatband-voltage variation along the channel on the drain characteristics of a TFT;Solid-State Electronics;1976-06

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