1200V GaN Switches on Sapphire Substrate-Reference-Cited by-同舟云学术

1200V GaN Switches on Sapphire Substrate

Published:2022-05-22 Issue: Volume: Page:
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Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Gupta G.¹,Kanamura M.²,Swenson B.¹,Bisi D.¹,Romanczyk B.¹,Neufeld C.¹,Wienecke S.¹,Ogino T.²,Miyazaki Y.²,Imanishi K.²,Ikeda J.²,Kamiyama M.²,Guerrero J.¹,Labrecque M.¹,Prejdova R.¹,Cruse B.¹,McKay J.¹,Bolante G.¹,Wang Z.¹,Hosoda T.²,Wu Y.¹,Parikh P.¹,Lal R.¹,Mishra U.¹

Affiliation:

1. Transphorm, Inc.,Goleta,CA,USA

2. Transphorm Japan,Shin-Yokohama,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813640.pdf?arnumber=9813640

Reference13 articles.

1. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

2. Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices

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