1200V GaN Switches on Sapphire Substrate
Author:
Affiliation:
1. Transphorm, Inc.,Goleta,CA,USA
2. Transphorm Japan,Shin-Yokohama,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813640.pdf?arnumber=9813640
Reference13 articles.
1. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
2. Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices
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