Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application-Reference-Cited by-同舟云学术

Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application

Published:2022-05-22 Issue: Volume: Page:
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Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Yin Shan¹,Lin Yiming¹,Hao Ronghui¹,Jin Shoudong¹,He Chuan¹,Yao Weigang¹,Li Xingjun¹,He Qingyuan¹,Pu Xiaoqing¹,Su Xiaoliang¹,Zou Yanbo¹,Cai Hui¹,Lee Kye-Jin¹,Wang Mike¹,Guo Harry¹,Shen Ke¹,Wang Felix¹,Chiu H.-C.¹,Chen Larry¹,Marcon Denis¹,Wong Roy K.-Y.¹

Affiliation:

1. Innoscience (Zhuhai) Technology Co., Ltd.,R&D Division,Zhuhai,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813684.pdf?arnumber=9813684

Reference8 articles.

1. Guideline for switching reliability evaluation procedures for gallium nitride power conversion devices,2021

2. Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application

3. A Generalized Approach to Determine the Switching Lifetime of a GaN FET

4. Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations

5. High Performance GaN-on-Si Power Devices with Ultralow Specific On-resistance Using Novel Strain Method Fabricated on 200 mm CMOS-Compatible Process Platform

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1. Investigation into the On-Resistance Shift Phenomenon of 650V Commercial GaN Power Devices with Different Structures;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

2. Characterization of Electrical Switching Safe Operation Area on Schottky-Type P-GaN Gate HEMTs;IEEE Transactions on Power Electronics;2023-07

3. A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power Devices;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

4. Evaluation of Efficiency and Power Factor in 3-kW GaN-Based CCM/CRM Totem-Pole PFC Converters for Data Center Application;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22