Experimental demonstration, challenges, and prospects of the vertical SiC FinFET-Reference-Cited by-同舟云学术

Experimental demonstration, challenges, and prospects of the vertical SiC FinFET

Published:2022-05-22 Issue: Volume: Page:
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Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Udrea F.¹,Naydenov K.¹,Kang H.¹,Kato T.²,Kagoshima E.²,Fujioka H.²,Tomita H.²,Nishiwaki T.²,Fujiwara H.²,Kimoto T.³

Affiliation:

1. University of Cambridge,Department of Engineering,Cambridge,UK,CB3 0FA

2. MIRISE Technologies Corporation,Toyota,Japan,470-0309

3. Kyoto University,Department of Electronic Sci. & Eng.,Kyoto,Japan,615-8510

Publisher

IEEE

Link

Reference18 articles.

1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm;hisamoto;IEEE Transactions on Electron Devices,2000

3. Sentaurus Device User Guide, Synopsys,2019

5. Fundamentals of power semiconductor devices;baliga,2010

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