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GaN MMIC based T/R-Module Front-End for X-Band Applications

  • Published:2008-10 Issue: Volume: Page:
  • ISSN:
  • Container-title:2008 European Microwave Integrated Circuit Conference
  • language:
  • Short-container-title:

Author:

Schuh P.1,Sledzik H.2,Reber R.2,Fleckenstein A.2,Leberer R.2,Oppermann M.2,Quay R.3,van Raay F.3,Seelmann-Eggebert M.3,Kiefer R.3,Mikulla M.3

Affiliation:

1. EADS Deutschland GmbH, Defence Electronics, Wörthstr. 85, 89077 Ulm, Germany, patrick.schuh@ieee.org

2. EADS Deutschland GmbH, Defence Electronics, Wörthstr. 85, 89077 Ulm, Germany

3. Fraunhofer Institute of Applied Solid-State Physics, Tullastr. 72, 79108 Freiburg, Germany

Publisher

IEEE

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation;IEEE Electron Device Letters;2024-03

2. Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications;International Journal of Circuit Theory and Applications;2024-01-27

3. The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs;IEEE Journal of the Electron Devices Society;2024

4. Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications;Micromachines;2023-07-28

5. K Band Transceiver Components;2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT);2023-07-21
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