A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load-Reference-Cited by-同舟云学术

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A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load

Published:1992 Issue:8 Volume:27 Page:1198-1202
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yan Z.X.,Deen M.J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/4/3926/00148329.pdf?arnumber=148329

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