Design for Reliability of SiC-MOSFET-Based 1500-V PV Inverters With Variable Gate Resistance
Author:
Affiliation:
1. Department of AAU Energy, Aalborg University, Aalborg, Denmark
2. College of Electrical Engineering, Zhejiang University, Hangzhou, China
Funder
Reliable Power Electronic
Velux Fonden
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Control and Systems Engineering
Link
http://xplorestaging.ieee.org/ielx7/28/9895356/09795882.pdf?arnumber=9795882
Reference37 articles.
1. A Lifetime Estimation Technique for Voltage Source Inverters
2. Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models
3. A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules
4. Reduction of EMI Noise Due to Nonideal Interleaving in a 100 kW SiC PV Converter
5. Cumulative Damage in Fatigue
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3. Review of Active Thermal Control for Power Electronics: Potentials, Limitations, and Future Trends;IEEE Open Journal of Power Electronics;2024
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5. An Input-Series Output-Series Noninverting Buck–Boost Converter for 1500 V DC Bus With Wide Input and Output Voltage Ranges;IEEE Transactions on Industrial Electronics;2023-11
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