Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models-Reference-Cited by-同舟云学术

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Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models

Published:2006-03 Issue:2 Volume:21 Page:295-309
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Bryant A.T.,Xiaosong Kang ,Santi E.,Palmer P.R.,Hudgins J.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/63/33697/01603661.pdf?arnumber=1603661

Cited by 89 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and Analysis of IGBT Based on Two-Dimensional Charge Distribution;IEEE Transactions on Power Electronics;2024-11

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3. An Analytical Carrier Recombination Turn-Off Transient Model for High-Voltage IGBTs;IEEE Transactions on Power Electronics;2024-06

4. Novel Parameters Extraction Method of High‐Speed PIN Diode for Power Integrated Circuit;Nanodevices for Integrated Circuit Design;2023-10-17

5. Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector;Scientific Reports;2023-08-02

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