Evaluating On-State Voltage and Junction Temperature Monitoring Concepts for Wide-Bandgap Semiconductor Devices-Reference-Cited by-同舟云学术

Evaluating On-State Voltage and Junction Temperature Monitoring Concepts for Wide-Bandgap Semiconductor Devices

Published:2022-11 Issue:6 Volume:58 Page:7550-7561
ISSN:0093-9994
Container-title:IEEE Transactions on Industry Applications
language:
Short-container-title:IEEE Trans. on Ind. Applicat.

Author:

Fritz Niklas¹^ORCID,Kamp Tobias¹^ORCID,Polom Timothy A.²^ORCID,Friedel Maximilian¹^ORCID,Doncker Rik W. De¹^ORCID

Affiliation:

1. Institute for Power Electronics and Electrical Drives (ISEA), RWTH Aachen University, Aachen, Germany

2. AMSC Austria GmbH, Klagenfurt, Austria

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/28/9956958/09832794.pdf?arnumber=9832794

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4. Closed-Loop dv/dt Control of SiC MOSFETs Yielding Minimal Losses and Machine Degradation

5. Balancing the switching losses of paralleled SiC MOSFETs using an intelligent gate driver;lüdecke;Proc PCIM Asia Int Exhib Conf Power Electron Intell Motion Renewable Energy Manage,0

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1. Machine learning-based prediction of on-state voltage for real-time health monitoring of IGBT;Power Electronic Devices and Components;2023-10

2. Utilizing Electroluminescence of Silicon IGBTs for Junction Temperature Sensing;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

3. Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters;Energies;2023-03-16