Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power-Reference-Cited by-同舟云学术

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Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power

Published:2003-04 Issue:4 Volume:51 Page:1129-1134
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:en
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Villard F.,Prigent J.-P.,Morvan E.,Dua C.,Brylinski C.,Temcamani F.,Pouvil P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/26756/01193121.pdf?arnumber=1193121

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation and Comparison of Current-Voltage characteristics of MESFET by Varying Channel Length and Comparing it with Single Gate MOSFET to Optimize Conductivity;2022 14th International Conference on Mathematics, Actuarial Science, Computer Science and Statistics (MACS);2022-11-12

2. Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model;SIAM Journal on Applied Mathematics;2015-01

3. An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects;Journal of Semiconductors;2015-01

4. Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors;IEICE Transactions on Electronics;2011

5. 3510-v 390-mΩ * cm2 4h-sic lateral jfet on a semi-insulating substrate;IEEE Electron Device Letters;2009-09

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