3510-v 390-mΩ * cm2 4h-sic lateral jfet on a semi-insulating substrate-Reference-Cited by-同舟云学术

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3510-v 390-mΩ * cm2 4h-sic lateral jfet on a semi-insulating substrate

Published:2009-09 Issue:9 Volume:30 Page:957-959
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Huang Chih-Fang,Kan Cheng-Li,Wu Tian-Li,Lee Meng-Chia,Liu Yo-Zthu,Lee Kung-Yen,Zhao Feng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5224033/05191105.pdf?arnumber=5191105

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of Silicon Carbide Processing for Power MOSFET;Crystals;2022-02-11

2. (Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate;ECS Transactions;2018-04-09

3. Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer;Japanese Journal of Applied Physics;2017-11-09

4. Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling;IEEE Transactions on Electron Devices;2017-09

5. 3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature;IEEE Electron Device Letters;2016-09

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