Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=12/a=120305/pdf
Reference24 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
3. 1.1 kV 4H-SiC power UMOSFETs
4. Measurement and modeling of gate–drain capacitance of silicon carbide vertical double-diffused MOSFET
5. Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations
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4. Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate;IEEE Transactions on Electron Devices;2023-04
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