Failure mechanisms in chip-metallization in power applications-Reference-Cited by-同舟云学术

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Failure mechanisms in chip-metallization in power applications

Published:2014-04 Issue: Volume: Page:
ISSN:
Container-title:2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
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Author:

Durand C.,Klingler M.,Coutellier D.,Naceur H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6808929/6813763/06813772.pdf?arnumber=6813772

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermo-mechanical fatigue induced unexpected strain hardening of Cu clip wiring on transfer-mold type EV power modules;International Journal of Fatigue;2023-07

2. Power metallization degradation monitoring on power MOSFETs by means of concurrent degradation processes;Journal of Power Electronics;2022-05-30

3. Optimizing the Nano Wiring and KlettSintering parameters for low-temperature die to DCB attach of power electronic chips;2021 16th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT);2021-12-21

4. A Simple Metal-Semiconductor Substructure Model for the Thermal Induced Fatigue Simulation in Power Integrated Circuits;Proceedings of the 1st International Conference on Numerical Modelling in Engineering;2018-08-29

5. A simple metal-semiconductor substructure for the advanced thermo-mechanical numerical modeling of the power integrated circuits;Microelectronics Reliability;2018-08

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