A Compact 37-dBm 3.3-5 GHz Broadband Power Amplifier in 2-μm GaAs Technology
Author:
Affiliation:
1. South China University of Technology,School of Electronic and Information Engineering,Guangzhou,China,510640
2. Shen Zhen Lansus Technologies Inc,Shenzhen,China,518052
Funder
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10106786/10106791/10107153.pdf?arnumber=10107153
Reference7 articles.
1. A Compact Ka-Band Transformer-Coupled Power Amplifier for 5G in 0.15um GaAs
2. Fully Integrated 39 dBm, 3-Stage Doherty PA MMIC in a Low-Voltage GaAs HBT Technology
3. A concurrent dual band 870 and 1970 MHz 10 W envelope tracking PA designed by a WCDMA probability distribution conscious approach
4. A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm2 Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS
5. A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm2 Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS
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