Fully Integrated 39 dBm, 3-Stage Doherty PA MMIC in a Low-Voltage GaAs HBT Technology-Reference-Cited by-同舟云学术

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Fully Integrated 39 dBm, 3-Stage Doherty PA MMIC in a Low-Voltage GaAs HBT Technology

Published:2012-02 Issue:2 Volume:22 Page:94-96
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Karthaus Udo,Sukumaran Deepti,Tontisirin Sitt,Ahles Stephan,Elmaghraby Ahmed,Schmidt Lothar,Wagner Horst

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/6151245/06140598.pdf?arnumber=6140598

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Broadband InGaP/GaAs HBT Doherty Power Amplifier IC Using Direct Interstage Power Division for Compact 5G NR Handset Module;IEEE Access;2023

2. A Compact 37-dBm 3.3-5 GHz Broadband Power Amplifier in 2-μm GaAs Technology;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27

3. A Fully Integrated High-Efficiency Three-stage Doherty Power Amplifier for Small-cell application;2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM);2021-11-28

4. A high-efficiency Doherty Power Amplifier for wireless base stations;International Journal of Electronics Letters;2020-02-12

5. A 45–2500 MHz high efficiency power amplifier with novel adaptive bias technique;IEICE Electronics Express;2020

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