Codesign of S Band Integrated GaAs PIN- diodes Limiter and Low Noise Amplifier-Reference-Cited by-同舟云学术

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Codesign of S Band Integrated GaAs PIN- diodes Limiter and Low Noise Amplifier

Published:2022-11-27 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Zhou Yong Chun¹,Yan Dai Jun¹,Cheng Qiang¹

Affiliation:

1. Southeast University,State Key Laboratory of Millimeter Waves,Nanjing,210096

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10106786/10106791/10107291.pdf?arnumber=10107291

Reference15 articles.

1. 10W CW broadband balanced limiter/LNA fabricated using MSAG MESFET process

2. 18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA

3. Concurrent design of Schottky diode limiter and LNA

4. Power limiter/low-noise amplifier of C-band

5. Degradation of Ka-Band GaN LNA Under High-Input Power Stress: Experimental and Theoretical Insights

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