Comparative study of hot-electron reliability of PHEMT vs. MESFET for high efficiency power amplifiers-Reference-Cited by-同舟云学术

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Comparative study of hot-electron reliability of PHEMT vs. MESFET for high efficiency power amplifiers

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Container-title:1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)
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Author:

Tkachenko Y.,Klimashov A.,Wei C.,Zhao Y.,Bartle D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6330/16923/00779880.pdf?arnumber=779880

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Safe Operating Area of GaAs MESFET for Nonlinear Applications;IEEE Transactions on Device and Materials Reliability;2006-06

2. Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs;Microelectronics Reliability;2006-01

3. Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions;Microelectronics Reliability;2005-09

4. Off-State Breakdown of GaAs PHEMTs: Review and New Data;IEEE Transactions on Device and Materials Reliability;2004-03

5. A methodology to delimit the on-state safe operating area of GaAS MOSFET for non linear applications;Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005.

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