Influence of the calibration kit on the estimation of parasitic effects in HEMT devices at microwave frequencies-Reference-Cited by-同舟云学术

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Influence of the calibration kit on the estimation of parasitic effects in HEMT devices at microwave frequencies

Published:2002-08 Issue:4 Volume:51 Page:650-655
ISSN:0018-9456
Container-title:IEEE Transactions on Instrumentation and Measurement
language:en
Short-container-title:IEEE Trans. Instrum. Meas.

Author:

Miranda J.M.,Fager C.,Zirath H.,Sakalas P.,Munoz S.,Sebastian J.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/19/22392/01044684.pdf?arnumber=1044684

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation;Chinese Physics B;2021-09-29

2. Sensitivity of FET parasitic elements extraction due to uncertainty on TRM calibration structures;International Journal of RF and Microwave Computer-Aided Engineering;2021-09-03

3. Transistor Model Verification Including Measurement Uncertainty;IEEE Transactions on Microwave Theory and Techniques;2016-11

4. Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis;IEEE Transactions on Microwave Theory and Techniques;2016-05

5. Influence of losses and dispersion of the reference line of LRM on the parasitic and intrinsic element values of on-wafer transistors;Microwave and Optical Technology Letters;2006

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