7nm FinFET technology heavy ion SEL evaluation using Xilinx Versal as case study
Author:
Affiliation:
1. Cnes,Toulouse,France
2. Bibench,Toulouse,France
3. Xilinx Inc.,San Jose,CA,95124
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9954459/9954461/09954564.pdf?arnumber=9954564
Reference10 articles.
1. A Novel Error Rate Estimation Approach forUltraScale+ SRAM-based FPGAs
2. Applicability of FinFET Technologies for Space Applications;alexandrescu;AMICSA 2021,0
3. Putting the die contour back - Methods in advanced sample preparation for 3D and flip-chip devices
4. Single-Event Characterization of Xilinx UltraScale+® MPSOC under Standard and Ultra-High Energy Heavy-Ion Irradiation
5. Heavy Ion and Proton Induced Single Event Effects on Xilinx Zynq UltraScale+ Field Programmable Gate Array (FPGA)
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