Impact of the Data Retention Threshold Voltage on the Cell-to-Cell SEU Sensitivity of COTS SRAMs-Reference-Cited by-同舟云学术

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Impact of the Data Retention Threshold Voltage on the Cell-to-Cell SEU Sensitivity of COTS SRAMs

Published:2021-09 Issue: Volume: Page:
ISSN:
Container-title:2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Rezaei Mohammadreza¹,Panduro Arturo Arinero²,Franco Francisco J.³,Fabero Juan Carlos¹,Mecha Hortensia¹,Letiche Manon⁴,Puchner Helmut⁵,Clemente Juan Antonio¹

Affiliation:

1. Universidad Complutense de Madrid (UCM),Facultad de Informática,Clemente are With the Computer Architecture Department,Madrid,Spain,E-28047

2. Universidad Complutense de Madrid (UCM),Facultad de Ciencias Físicas,Solucions & Product Dep., Defense, Indra Sistemas,Aranjuez,Spain,E-28300

3. Institue of Particle and Cosmos Physics (IPARCOS), Facultad de Ciencias Físicas, Universidad Complutense de Madrid (UCM),EMFTEL Dep,Spain

4. Institut Laue-Langevin (ILL),Grenoble CEDEX 9,France,F-38042

5. Infineon Technologies, Memory Solutions, Aerospace & Defense, 3901,San Jose,CA,USA,95134

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9954459/9954461/09954475.pdf?arnumber=9954475

Reference21 articles.

1. Low Energy Proton SEUs in 32-nm SOI SRAMs at Low Vdd

2. Sensitivity Characterization of a COTS 90-nm SRAM at Ultra Low Bias Voltage

3. SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons

4. Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD

5. Neutron-Induced Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage

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