A technique to improve the drive current of high-voltage I/O transistors in digital CMOS technologies-Reference-Cited by-同舟云学术

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A technique to improve the drive current of high-voltage I/O transistors in digital CMOS technologies

Published:2005-10 Issue:10 Volume:26 Page:752-754
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Haifeng Xu ,O K.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/32347/01510749.pdf?arnumber=1510749

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. High-$Q$ Thick-Gate-Oxide MOS Varactors With Subdesign-Rule Channel Lengths for Millimeter-Wave Applications;IEEE Electron Device Letters;2008-04

3. A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells;IEEE Journal of Solid-State Circuits;2007-11

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