Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices-Reference-Cited by-同舟云学术

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Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices

Published:2014-09 Issue:3 Volume:8 Page:28-39
ISSN:1932-4529
Container-title:IEEE Industrial Electronics Magazine
language:
Short-container-title:EEE Ind. Electron. Mag.

Author:

Iannuzzo Francesco,Abbate Carmine,Busatto Giovanni

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering

Link

http://xplorestaging.ieee.org/ielx7/4154573/6899768/06899810.pdf?arnumber=6899810

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Self-Commissioning Edge Computing Method for Data-Driven Anomaly Detection in Power Electronic Systems;IEEE Transactions on Industrial Electronics;2024-10

2. Impacts of the Pressure Distribution on Dynamic Avalanche in Single Press-Pack IGBT Chip;IEEE Transactions on Power Electronics;2024-07

3. Design and Fabrication of Fs-Igbt with Strong Short-Circuit Ruggedness;2024

4. Parallelization of Silicon-Carbide MOSFET and Silicon IGBT: Challenges to Obtain a Cost-Effective Hybrid Switch;2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP);2023-11-26

5. Condition monitoring of SiC power assembly by using time-series analysis of acoustic emission during power cycling tests;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

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