Impacts of the Pressure Distribution on Dynamic Avalanche in Single Press-Pack IGBT Chip-Reference-Cited by-同舟云学术

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Impacts of the Pressure Distribution on Dynamic Avalanche in Single Press-Pack IGBT Chip

Published:2024-07 Issue:7 Volume:39 Page:8187-8201
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Li Tianchen¹^ORCID,Wang Yaohua²^ORCID,Zhang Yiming³^ORCID,Fan Jiayu¹^ORCID,Li Xuebao¹^ORCID,Qi Lei¹^ORCID,Cui Xiang¹^ORCID

Affiliation:

1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electrical Power University, Beijing, China

2. Beijing Huairou Laboratory, Beijing, China

3. State Grid Economic and Technological Research Institute Company Limited, Beijing, China

Funder

National Natural Science Fund for Distinguished Young Scholars

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10534151/10480284.pdf?arnumber=10480284

Reference42 articles.

1. The effect of the surface roughness characteristics of the contact interface on the thermal contact resistance of the PP-IGBT module

2. Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices

3. Analytical model for the destruction mechanism of GTO-like devices by avalanche injection

4. Second breakdown and latch-up behavior of IGBTs;Heumamn

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