Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm-Reference-Cited by-同舟云学术

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Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm

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Container-title:13th IEEE International Semiconductor Laser Conference
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Author:

Valster A.,van der Poel C.J.,Finke M.N.,Boermans M.J.B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6179/16501/00763615.pdf?arnumber=763615

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of High-Power Red VCSEL on a Removable Substrate;Photonics;2022-10-12

2. Influence of effective mass and energy band splittings on the radiative characteristics of QW lasers at transparency;Physica E: Low-dimensional Systems and Nanostructures;1999-11

3. Low-threshold 650 nm band S3 laser diodes using tensile strained GaInAsP/AlGaInP MQW;Electronics Letters;1998

4. Ordering in strained GaxIn1−xP quantum wells grown by metalorganic vapor phase epitaxy;Journal of Crystal Growth;1994-12

5. Strain effects in (AlyGa1-y)xIn1-xP lasers operating at fixed threshold gain;Electronics Letters;1994-02-03

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