Influence of effective mass and energy band splittings on the radiative characteristics of QW lasers at transparency
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Effects of uniaxial stress on the electronic and optical properties of GaAs-AlxGa1−xAs quantum wells
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4. Improved 1.5 μm wavelength lasers using high quality LP-OMVPE grown strained-layer InGaAs quantum wells
5. Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates;Physica E: Low-dimensional Systems and Nanostructures;2006-03
2. A theoretical comparison of the 1.3μm doped InxGa1−xNyAs1−y/GaAs quantum well lasers for different x/y concentrations;Physica E: Low-dimensional Systems and Nanostructures;2005-03
3. A theoretical comparison of the pressure dependence of the threshold current of phosphorus-, aluminium- and nitrogen-based 1.3 µm lasers;Semiconductor Science and Technology;2003-10-01
4. Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers;Semiconductor Science and Technology;2003-01-16
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