Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
3. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
4. 1.3 [micro sign]m continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition
5. Electronic Properties of Ga(In)NAs Alloys
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