A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaN x As y P 1– x–y /GaP quantum wells on GaP substrates-Reference-Cited by-同舟云学术

A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaN x As y P 1– x–y /GaP quantum wells on GaP substrates

Published:2014-07 Issue:7 Volume:23 Page:077104
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Ünsal Ö L,Gönül B,Temiz M

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/23/7/077104/pdf

Reference26 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Band parameters for nitrogen-containing semiconductors

3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

4. Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes

5. Control of structural defects in group III V N alloys grown on Si

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