Revealing the effects of nitrogen on threshold current density in GaNxAsyP1−x−y/GaP/AlzGa1−zP type I QW laser structures by hydrostatic pressure-Reference-Cited by-同舟云学术

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Revealing the effects of nitrogen on threshold current density in GaNxAsyP1−x−y/GaP/AlzGa1−zP type I QW laser structures by hydrostatic pressure

Published:2016-06 Issue: Volume:80 Page:176-184
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Ünsal Ömer L.,Gönül Beşire

Funder

Scientific and Technical Research Council of Turkey

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Electronic Band Structure of GaNPAs Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells;Kudrawiec;Phys. Rev. Appl.,2014

2. H. Döscher, Springer, (2013) http://dx.doi.org/10.1007/978-3-319-02880-4

3. Physical properties and efficiency of GaNP light emitting diodes

4. Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes

5. Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates;TURKISH JOURNAL OF PHYSICS;2017

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