Electrical and physical characterization of remote plasma oxidized HfO/sub 2/ gate dielectrics-Reference-Cited by-同舟云学术

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Electrical and physical characterization of remote plasma oxidized HfO/sub 2/ gate dielectrics

Published:2006-05 Issue:5 Volume:53 Page:1153-1160
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yamamoto K.,Deweerd W.,Aoulaiche M.,Houssa M.,De Gendt S.,Horii S.,Asai M.,Sano A.,Hayashi S.,Niwa M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/34109/01624697.pdf?arnumber=1624697

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved dielectric properties of La2O3–ZrO2 bilayer films for novel gate dielectrics;Vacuum;2020-08

2. Ni doping significantly improves dielectric properties of La2O3 films;Journal of Alloys and Compounds;2020-05

3. Effect of Fe impurity on performance of La2O3 as a high k gate dielectric;Ceramics International;2019-11

4. Thermal Oxidation of Gd2O3;Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets;2017

5. Film and Device Characteristics of Sputter-Deposited Hafnium Zirconate Gate Dielectric;Journal of The Electrochemical Society;2008

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