High-Quality$hboxAl_2hboxO_3/hboxPr_2hboxO_3/hboxAl_2hboxO_3$MIM Capacitors for RF Applications-Reference-Cited by-同舟云学术

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High-Quality$hboxAl_2hboxO_3/hboxPr_2hboxO_3/hboxAl_2hboxO_3$MIM Capacitors for RF Applications

Published:2006-08 Issue:8 Volume:53 Page:1937-1939
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wenger C.,Oberbeck L.,Schroeder U.,Mussigmussig H.-J.,Lippert G.,Sorge R.,Schroeder T.,Mane A.U.,Lupina G.,Dabrowski J.,Zaumseil P.,Fan X.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/34776/01661898.pdf?arnumber=1661898

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal-layer capacitors in the 65nm CMOS process and the application for low-leakage power-rail ESD clamp circuit;Microelectronics Reliability;2014-01

2. Electrical Properties of Bi2Ti2O7 Thin Films Grown at Low Temperature by the Pulsed Laser Deposition;Electrochemical and Solid-State Letters;2011

3. Crystallization and Improvement of Electrical Properties of Bi5Nb3O15Thin Films Grown at Low Temperature;Japanese Journal of Applied Physics;2009-11-20

4. Effect of oxygen vacancy and Mn-doping on electrical properties of Bi4Ti3O12 thin film grown by pulsed laser deposition;Acta Materialia;2009-05

5. Structural and Electrical Properties of (1-x)Bi5Nb3O15-xBi4Ti3O12 Ceramics and 0.96Bi5Nb3O15-0.04Bi4Ti3O12 Thin Films Grown by Pulsed Laser Deposition;Electronic Materials Letters;2009-03-27

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