A High Performance 0.25/spl mu/m CMOS-Reference-Cited by-同舟云学术

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A High Performance 0.25/spl mu/m CMOS

Published:1993 Issue: Volume: Page:
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Container-title:Symposium on VLSI Technology
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Author:

Shahidi ,Warnock ,Acovic ,Agnello ,Blair ,Bucelot ,Burghartz ,Crabbe ,Cre ,Coane ,Comfort ,Davari ,Fischer ,Canin ,Gittleman ,Keller ,Jenkins ,Klaus ,Kiewtniak ,Lii ,McFarland ,Ning ,PoIcari ,Subbana ,Sun ,Sunderland ,Warren ,Wong

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx4/6147/16441/00760261.pdf?arnumber=760261

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation mechanism of the multilayered-structure barrier of WNx/Si(100);Applied Physics Letters;2002-06-10

2. A study of tilt angle effect on Halo PMOS performance;Microelectronics Reliability;1998-09

3. In-Situ Boron-Doped Epitaxial Silicon Films Grown by UHVRTCVD: Applications in Channel Engineering & Ultra-Shallow Junction Formation;MRS Proceedings;1998

4. Formation of Counter Doped Shallow Junctions by Boron and Antimony Implantation and Codiffusion in Silicon;MRS Proceedings;1997

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