Arsenic ion implant energy effects on CMOS gate oxide hardness-Reference-Cited by-同舟云学术

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Arsenic ion implant energy effects on CMOS gate oxide hardness

Published:2005-12 Issue:6 Volume:52 Page:2387-2391
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Draper B.L.,Shaneyfelt M.R.,Young R.W.,Headley T.J.,Dondero R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/33493/01589212.pdf?arnumber=1589212

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28nm node;Microelectronics Reliability;2014-09

2. Effects of arsenic-ion beam density on defect evolution in polysilicon films;Solid-State Electronics;2010-12

3. Implanted and irradiated SiO[sub 2]∕Si structure electrical properties at the nanoscale;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

4. Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging;IEEE Transactions on Nuclear Science;2008-12

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