High-Temperature Dynamics, High-Speed Modulation, and Transmission Experiments Using 1.3- $\mu\hbox{m}$ InGaAs Single-Mode VCSELs-Reference-Cited by-同舟云学术

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High-Temperature Dynamics, High-Speed Modulation, and Transmission Experiments Using 1.3- $\mu\hbox{m}$ InGaAs Single-Mode VCSELs

Published:2007-09 Issue:9 Volume:25 Page:2791-2798
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Soderberg E.,Gustavsson J.S.,Modh P.,Larsson A.,Zhenzhong Zhang ,Berggren J.,Hammar M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/50/4298949/04299013.pdf?arnumber=4299013

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Long-Wavelength VCSELs: Status and Prospects;Photonics;2023-03-03

2. 1.3 μm optically-pumped monolithic VCSEL based on GaAs with InGa(Al)As superlattice active region;Laser Physics Letters;2022-05-23

3. High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance;IEEE Journal of Quantum Electronics;2022-04

4. Theory and Optimization of 1.3- $\mu \text{m}$ Metamorphic Quantum Well Lasers;IEEE Journal of Quantum Electronics;2016-03

5. GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells;Journal of Applied Physics;2016-01-28

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