GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells
Author:
Affiliation:
1. Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
2. Department of Chemistry, Lancaster University, Lancaster LA1 4YB, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4940880
Reference31 articles.
1. The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory
2. 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
3. The QD-Flash: a quantum dot-based memory device
4. GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response
5. Photoluminescence studies of individual and few GaSb/GaAs quantum rings
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3. Manipulation of linear and nonlinear optical properties of GaSb quantum ring in AlGaAs/GaAs/AlGaAs quantum well and AlAs/GaAs/InGaAs/AlAs double quantum well;Optical and Quantum Electronics;2020-06
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