Exploring Phase and Bandgap Variations in Gallium Oxide Using Mist-based Chemical Vapor Deposition System
Author:
Affiliation:
1. Electronics and Electrical Engineering, IIT Guwahati,Assam,India
2. School of Computing and Electrical Engineering, IIT Mandi,Himachal Pradesh,India
3. Centre for Nanotechnology, IIT Guwahati,Assam,India
Funder
Science and Engineering Research Board
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511795.pdf?arnumber=10511795
Reference17 articles.
1. Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
2. Extremely low dark current and detection range extension of Ga2O3 UV photodetector using Sn alloyed nanostructures
3. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
4. HVPE growth of α- and ε-Ga2O3 on patterned sapphire substrates
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