Impact of Doping CsPbBr<sub>3</sub> with Organic Iodide Salts on Memory Performance-Reference-Cited by-同舟云学术

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Impact of Doping CsPbBr₃ with Organic Iodide Salts on Memory Performance

Published:2024-03-03 Issue: Volume: Page:1-3
ISSN:
Container-title:2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Nath Bidisha¹,Panchal Ashutosh¹,Ramamurthy Praveen C¹,Mahapatra Debiprosad Roy¹,Hegde Gopalkrishna¹

Affiliation:

1. IISc,Bangalore,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511837.pdf?arnumber=10511837

Reference9 articles.

1. Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells

2. Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

3. Recent Advances in Halide Perovskite Resistive Switching Memory Devices: A Transformation from Lead-Based to Lead-Free Perovskites

4. Air-Stable Cesium Lead Iodide Perovskite for Ultra-Low Operating Voltage Resistive Switching

5. High-temperature polymers with record-high breakdown strength enabled by rationally designed chain-packing behavior in blends

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors;Materials Science in Semiconductor Processing;2024-11

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