InP/GaInP Composite-Collector for Improved Breakdown Voltage in the InP/GaAsSb DHBTs
Author:
Affiliation:
1. MWE Laboratory, ETH-Zurich,Switzerland
2. Albis Optoelectronics AG,Switzerland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511270/10511310/10511611.pdf?arnumber=10511611
Reference6 articles.
1. Scaling of InP/GaAsSb DHBTs: A Simultaneous $f_{\text{T}}/f_{\text{MAX}}=463/829$ GHz in a $10\ \mu \text{m}$ Long Emitter
2. InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz
3. Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate
4. High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With $f_{T} = \hbox{436}\ \hbox{GHz}$
5. Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters
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