A 1.2 dB NF 16.2 dB Gain +0.5 dBm OP1dB 18 GHz SATCOM LNA in 130 nm CMOS-Reference-Cited by-同舟云学术

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A 1.2 dB NF 16.2 dB Gain +0.5 dBm OP1dB 18 GHz SATCOM LNA in 130 nm CMOS

Published:2024-03-03 Issue: Volume: Page:1-3
ISSN:
Container-title:2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Kakara Hari Kishore¹,Das Indrajit¹,Vanukuru Venkata¹

Affiliation:

1. GlobalFoundries,Design Platforms Team,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511270/10511310/10512221.pdf?arnumber=10512221

Reference6 articles.

1. 17-21 GHz Low-Noise Amplifier with Embedded Interference Rejection;Jodhka,2023

2. A 20-GHz Ultra-Low-Power LNA Using gm-Boosted and Current-Reuse Techniques in 65-nm CMOS for Satellite Communication Terminals

3. A 5-GHz CMOS wireless LAN receiver front end

4. A Packaged Single-Ended K-Band SiGe LNA with 2.14 dB Mean Noise Figure

5. A 12.5 mW Packaged K-Band CMOS SOI LNA with 1.5 dB NF

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