A Packaged Single-Ended K-Band SiGe LNA with 2.14 dB Mean Noise Figure-Reference-Cited by-同舟云学术

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A Packaged Single-Ended K-Band SiGe LNA with 2.14 dB Mean Noise Figure

Published:2018-10 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Aljuhani. Abdurrahman H.,Kanar Tumay,Rebeiz Gabriel M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8536738/8550831/08551123.pdf?arnumber=8551123

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ku-Band Fully Differential Current-Reuse Stacked Low-Noise Amplifier in 0.18-μm SiGe BiCMOS Technology;IEEE Microwave and Wireless Technology Letters;2024-04

2. A 1.2 dB NF 16.2 dB Gain +0.5 dBm OP1dB 18 GHz SATCOM LNA in 130 nm CMOS;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. A K-Band Hybrid-Packaged Temperature-Compensated Phased-Array Receiver and Integrated Antenna Array;IEEE Transactions on Microwave Theory and Techniques;2023-01

4. Analysis and Design of a CMOS LNA With Transformer-Based Integrated Notch Filter for Ku-Band Satellite Communications;IEEE Transactions on Microwave Theory and Techniques;2022-01

5. Design and measurements of a 28 GHz High-Linearity LNA in 45nm SOI-CMOS;2021 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS);2021-11-01

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