Design Considerations of a 3.3 kV SiC-based Reverse Voltage Blocking Module for Current Source Inverter Application
Author:
Affiliation:
1. North Carolina State University,Electrical & Computer Engineering,Raleigh,USA
2. Powerex Inc,Pittsburgh,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131381.pdf?arnumber=10131381
Reference18 articles.
1. An SiC-Based Half-Bridge Module With an Improved Hybrid Packaging Method for High Power Density Applications
2. Integrated SiC MOSFET module with ultra low parasitic inductance for noise free ultra high speed switching
3. Impact of device technology on cosmic ray failures in power modules
4. Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design Considerations, Development, and Experimental Validation of a 3.3 kV SiC-Based Reverse Voltage Blocking Half Bridge Module for Current Source Inverter Application;IEEE Transactions on Industry Applications;2024-05
2. Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application;IEEE Access;2023
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