Impact of device technology on cosmic ray failures in power modules

Author:

Scheuermann Uwe1,Schilling Uwe1

Affiliation:

1. Semikron Elektronik GmbH & Co. KGSigmundstr. 20090431NurembergGermany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference25 articles.

1. 1994 Proc. ISPSD H. Kabza H.‐J. Schulze Y. Gerstenmaier Cosmic radiation as a cause for power device failure and possible countermeasures 9 12

2. 1994 Proc. ISPSD H.R. Zeller Cosmic ray induced breakdown in semiconductor devices microscopic model and phenomenological lifetime prediction 339 340

3. 1994 Proc. ISPSD H. Matsuda T. Fujiwara M. Hiyoshi Analysis of GTO failure mode during DC voltage blocking 221 225

4. 1994 Proc. PCIM J. Lutz U. Scheuermann Advantages of the new controlled axial lifetime diode 163 169

5. 2011 Proc. PCIM Asia F. Kozlowski B. Koenig M. Hansmann Enhanced 4th generation CAL diode for highly efficient applications 124 129

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