Performance Comparison of 10 kV and Series-connected 3.3 kV SiC MOSFETs based VSCs for MV Grid Interfacing Applications-Reference-Cited by-同舟云学术

Performance Comparison of 10 kV and Series-connected 3.3 kV SiC MOSFETs based VSCs for MV Grid Interfacing Applications

Published:2023-03-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Kokkonda Raj Kumar¹,Parashar Sanket¹,Bhattacharya Subhashish¹

Affiliation:

1. FREEDM Systems Center, North Carolina State University,Raleigh,NC,USA

Funder

Office of Energy Efficiency and Renewable Energy

U.S. Department of Energy

NSF

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131385.pdf?arnumber=10131385

Reference23 articles.

1. Performance comparison of 10 kvx2013;15 kv high voltage sic modules and high voltage switch using series connected 1.7 kv lv sic mosfet devices;vechalapu;2016 IEEE Energy Conversion Congress and Exposition (ECCE),0

2. Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications

3. The next generation of high voltage (10 kV) silicon carbide power modules

4. Characterization and Robustness Evaluation of 3.3 kV/40 mΩ SiC DMOSFETs

5. Fundamentals of Power Semiconductor Devices

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