Dead Time Reduction Strategy for GaN-Based Low-Voltage Inverter in Motor Drive System
Author:
Affiliation:
1. Dipartimento Energia “G. Ferraris”, Politecnico di Torino,Torino,Italy
2. EPC Italy Srl Efficient Power Conversion,Torino,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131652.pdf?arnumber=10131652
Reference13 articles.
1. Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection
2. An Automotive-Use 5MHz, 40V to 1.2V, Single-Stage AOT GaN DC-DC Converter with One-Cycle Transient Response and Load-Adaptive Dead Time Control
3. Comparison of deadtime effects on the performance of DC-DC converters with GaN FETs and silicon MOSFETs
4. Monolithic Bidirectional Switch Based on GaN Gate Injection Transistors
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1. Investigation of Dead Time Losses in Inverter Switching Leg Operation: GaN FET vs. MOSFET Comparison;Energies;2024-08-05
2. Influence of Reverse Conduction on Dead Time Selection in GaN-Based Inverters for AC Motor Drives;IEEE Access;2024
3. Current Clamping Phenomena in Three Phase Inverter Considering Digital Implementation Effects;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
4. Optimized Design of Fast-Switching GaN-based Inverters Utilizing a Digital Prototype in a Standardized Realistic Test Cycle;2023 IEEE Design Methodologies Conference (DMC);2023-09-24
5. Dead Time Constraints in Gallium Nitride Devices for Inverter Applications;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
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