Comparison of deadtime effects on the performance of DC-DC converters with GaN FETs and silicon MOSFETs
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7835398/7854636/07854939.pdf?arnumber=7854939
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Reverse Conduction on Dead Time Selection in GaN-Based Inverters for AC Motor Drives;IEEE Access;2024
2. Accurate Analytical eGaN® HEMT Parameterizable Matlab® Model Based on Datasheet from Manufacturer and Its Applications in Optimal Design;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
3. Fast Switching of GaN Transistors using a Boosted Gate Voltage;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
4. Enhanced Low-Voltage GaN FETs for e-Mobility Motor Control Improvements;2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);2023-07-17
5. Dead Time Reduction Strategy for GaN-Based Low-Voltage Inverter in Motor Drive System;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19
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