Comparison of deadtime effects on the performance of DC-DC converters with GaN FETs and silicon MOSFETs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Comparison of deadtime effects on the performance of DC-DC converters with GaN FETs and silicon MOSFETs

Published:2016-09 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Energy Conversion Congress and Exposition (ECCE)
language:
Short-container-title:

Author:

Glaser John S.,Reusch David

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7835398/7854636/07854939.pdf?arnumber=7854939

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate Analytical eGaN^® HEMT Parameterizable Matlab^® Model Based on Datasheet from Manufacturer and Its Applications in Optimal Design;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

2. Fast Switching of GaN Transistors using a Boosted Gate Voltage;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

3. Enhanced Low-Voltage GaN FETs for e-Mobility Motor Control Improvements;2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);2023-07-17

4. Dead Time Reduction Strategy for GaN-Based Low-Voltage Inverter in Motor Drive System;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

5. TID Testing of COTS-based, Two-Phase, Point-of-Load Converters for Aerospace Applications;2023 IEEE Aerospace Conference;2023-03-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP